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UMG2N PDF预览

UMG2N

更新时间: 2023-12-06 20:09:21
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 656K
描述
SOT-353

UMG2N 数据手册

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ANGJING ELECTRONICS TECHNOLOGY CO., LTD  
ransistors (Built-in Resistors)  
Dual Digital Transistors (NPN+NPN)  
UMG2N  
SOT-353  
FEATURES  
Two DTC144E transistors are built-in a package.  
z
MARKING: G2  
Absolute maximum ratings(Ta=25)  
Parameter  
Supply voltage  
Input voltage  
Symbol  
Limits  
50  
Unit  
V
VCC  
-10~+40  
VIN  
V
IO  
30  
mA  
mA  
mW  
Output current  
IC(Max.)  
PC  
100  
150  
Power dissipation  
Operation Junction and  
Storage Temperature Range  
TJ,Tstg  
-55~+150  
Electrical characteristics (Ta=25)  
Parameter  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Min.  
Typ  
Max.  
Unit  
Conditions  
VCC=5V ,IO=100μA  
VO=0.3V ,IO=2mA  
IO/II=10mA/0.5mA  
VI=5V  
0.5  
Input voltage  
V
3
Output voltage  
Input current  
0.3  
0.18  
0.5  
V
mA  
μA  
Output current  
IO(off)  
GI  
VCC=50V,VI=0  
VO=5V,IO=5mA  
DC current gain  
Input resistance  
Resistance ratio  
Transition frequency  
68  
32.9  
0.8  
R1  
47  
1
61.1  
1.2  
kΩ  
R2/R1  
fT  
250  
MHz  
VCE=10V ,IE=-5mA,f=100MHz  
www.jscj-elec.com  
1
Rev. - 2.0  

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