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UMG4N

更新时间: 2024-11-14 23:14:55
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管数字晶体管
页数 文件大小 规格书
3页 85K
描述
General purpose (dual digital transistors)

UMG4N 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.76Is Samacsys:N
最大集电极电流 (IC):0.1 A最小直流电流增益 (hFE):100
JESD-609代码:e2元件数量:2
极性/信道类型:NPN子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Copper (Sn/Cu)
晶体管元件材料:SILICONBase Number Matches:1

UMG4N 数据手册

 浏览型号UMG4N的Datasheet PDF文件第2页浏览型号UMG4N的Datasheet PDF文件第3页 
EMG4 / UMG4N / FMG4A  
Transistors  
General purpose (dual digital transistors)  
EMG4 / UMG4N / FMG4A  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Two DTC114T chips in a EMT or UMT or SMT  
package.  
EMG4  
( )  
3
( )  
2
( )  
1
(
(
)
)
4
5
zEquivalent circuits  
1.2  
1.6  
EMG4 / UMG4N  
FMG4A  
(3)  
(2)  
(1)  
(3)  
(4)  
(5)  
R1  
R1  
R1  
R1  
ROHM  
:
EMT5  
Each lead has same dimensions  
(4)  
(5)  
(2)  
(1)  
R1=  
10kΩ  
R1=10kΩ  
UMG4N  
zPackage, marking, and packaging specifications  
Type  
Package  
EMG4  
EMT5  
G4  
UMG4N  
UMT5  
G4  
FMG4A  
SMT5  
G4  
1.25  
2.1  
Marking  
Code  
T2R  
TR  
T148  
3000  
0.1Min.  
Basic ordering unit (pieces)  
8000  
3000  
ROHM  
:
UMT5  
Each lead has same dimensions  
EIAJ  
: SC-88A  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
CBO  
CEO  
EBO  
50  
50  
FMG4A  
V
5
V
I
C
100  
mA  
1  
2  
EMG4 / UMG4N  
FMG4A  
150(TOTAL)  
300(TOTAL)  
150  
Pd  
mW  
Power dissipation  
1.6  
2.8  
Junction temperature  
Storage temperature  
Tj  
°C  
°C  
Tstg  
55 to +150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
0.3Min.  
ROHM  
EIAJ  
:
SMT5  
Each lead has same dimensions  
:
SC-74A  
Rev.A  
1/2  

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