Datasheet > UMG5N

UMG5N

更新时间： 2023-12-06 20:03:12

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体管
页数	文件大小	规格书
4页	625K
描述
SOT-353

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中文翻译

获取价格

数据手册

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UMG5N 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors (Built-in Resistors)

UMG5N Dual Digital Transistors (NPN+NPN)

SOT-353

FEATURES

Two DTC114Y chips in a package

Marking: G5

Absolute maximum ratings (T_a=25℃)

Symbol

V_CC

Parameter

Supply Voltage

Value

Unit

I_C(MAX)

V_i

Output Current

Input Voltage

100

-6 to +40

150

P_D

Power Dissipation

Operation Junction and Storage

Temperature Range

T_J,T_stg

℃

-55~+150

Electrical Characteristics (T_a=25℃)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Input turn-on voltage

Input cut-off voltage

Output voltage

V_i(on)

V_i(off)

V_O(on)

I_i

V_O=0.3V, I_O=1mA

_CC=5V, I_O=100µA

1.4

0.3

I_O=5mA, I_i=0.25 mA

V_i=5V

0.3

0.88

0.5

Input cut-off current

Output cut-off current

DC current gain

I_O(off)

G_i

V_CC=50V, V_i=0

µA

V_O=5V, I_O=5mA

V_O=10V, I_O=5mA, f =100MHz

Transition frequency

Input resistance

f_T

250

MHz

R₁

kΩ

Resistance ratio

R_2/R₁

3.7

5.7

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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