Datasheet > UMG8N

UMG8N

更新时间： 2024-11-03 14:54:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	614K
描述
SOT-353

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数据手册

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UMG8N 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors (Built-in Resistors)

UMG8N Dual Digital Transistors (NPN+NPN)

SOT-353

FEATURE

Built-In biasing resistors

Two DTC143Z chips in one package

Emitter(GND)-common type

Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors (see inner circuit)

The bias resistors consist of thin-film resistors with complete

isolation to allow negative biasing of the input. They also have the

advantage of completely eliminating parasitic effects

Only the on/off conditions need to be set for operation, making the circuit design easy

APPLICATION

Inverter circuit, Interface circuit, Driver circuit

MARKING: G8

Absolute maximum ratings (T_a=25℃) (For Tr1 and Tr2 in common)

Symbol

Parameter

Value

Unit

V_CC

V_i

Supply voltage

Input voltage

-5~+30

100

Output current

Power dissipation

I_O

150(Total*)

P_D

Operation Junction and Storage Temperature

Range

T_J,T_stg

-55~+150

℃

*120mW per element must not be exceeded

Electrical Characteristics (T_a=25℃) (For Tr1 and Tr2 in common)

Parameter

Input turn-on voltage

Input cut-off voltage

Output voltage

Symbol

V_i(on)

V_i(off)

V_O(on)

I_i

Test conditions

V_CC=0.3V, I_O=5mA

Min

Typ

Max

Unit

1.3

V_CC=5V, I_O=100µA

I_O=5mA, I_i=0.25mA

V_i=5V

0.5

0.3

1.8

0.5

Input cut-off current

Output cut-off current

DC current gain

µA

I_O(off)

G_i

V_CC=50V, V_i=0

V_O=5V, I_O=10mA

3.29

Input resistance

R₁

4.7

6.11

kΩ

Resistance ratio

R₂/R₁

f_T

Transition frequency

V_O=10V, I_O=5mA, f =100MHz

250

MHz

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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