是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G5 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.74 | Is Samacsys: | N |
其他特性: | DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 | 最大集电极电流 (IC): | 0.03 A |
集电极-发射极最大电压: | 50 V | 配置: | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 68 | JESD-30 代码: | R-PDSO-G5 |
JESD-609代码: | e2 | 元件数量: | 2 |
端子数量: | 5 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN COPPER |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UMG2NTR | ROHM |
获取价格 |
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) | |
UMG2TL | ROHM |
获取价格 |
暂无描述 | |
UMG3 | ETC |
获取价格 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-25VAR | |
UMG3N | HTSEMI |
获取价格 |
General purpose transistors (dual transistors) | |
UMG3N | ROHM |
获取价格 |
Emitter common (dual digital transistors) | |
UMG3N | CJ |
获取价格 |
SOT-353 | |
UMG3NTL | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, | |
UMG3NTR | ROHM |
获取价格 |
暂无描述 | |
UMG3TL | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, | |
UMG3TR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon |