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UMG2NTL PDF预览

UMG2NTL

更新时间: 2024-11-15 12:59:35
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管数字晶体管
页数 文件大小 规格书
3页 77K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

UMG2NTL 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.74Is Samacsys:N
其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:50 V配置:COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):68JESD-30 代码:R-PDSO-G5
JESD-609代码:e2元件数量:2
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN COPPER
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONVCEsat-Max:0.3 V
Base Number Matches:1

UMG2NTL 数据手册

 浏览型号UMG2NTL的Datasheet PDF文件第2页浏览型号UMG2NTL的Datasheet PDF文件第3页 
EMG2 / UMG2N / FMG2A  
Transistors  
Emitter common  
(dual digital transistors)  
EMG2 / UMG2N / FMG2A  
zFeatures  
zExternal dimensions (Unit : mm)  
1) Two DTC144E chips in a EMT or UMT or SMT  
package.  
EMG2  
2) Mounting cost and area can be cut in half.  
( )  
3
( )  
2
( )  
1
(
(
)
)
4
5
1.2  
1.6  
zStructure  
Dual NPN digital transistor  
(each with a single built in resistors)  
Each lead has same dimensions  
ROHM : EMT5  
Abbreviated symbol : G2  
The following characteristics apply to both the DTr1 and  
DTr2.  
UMG2N  
1.25  
2.1  
zEquivalent circuit  
0.1Min.  
EMG2 / UMG2N  
FMG2A  
Each lead has same dimensions  
(3)  
(4)  
(5)  
(3)  
(2)  
(1)  
R
1
=47kΩ  
=47kΩ  
R
1
=47kΩ  
=47kΩ  
R
1
R1  
R1  
R1  
R2  
R2  
R
2
R2  
R
2
R2  
ROHM : UMT5  
EIAJ : SC-88A  
DTr2  
DTr1  
DTr2  
DTr1  
Abbreviated symbol : G2  
(2)  
(1)  
(4)  
(5)  
FMG2A  
1.6  
2.8  
zAbsolute maximum ratings (Ta = 25°C)  
Limits  
Parameter  
Supply voltage  
Symbol  
Unit  
V
0.3to0.6  
V
CC  
50  
40  
Each lead has same dimensions  
ROHM : SMT5  
EIAJ : SC-74A  
Input voltage  
V
IN  
V
10  
30  
Abbreviated symbol : G2  
I
O
Output current  
mA  
mW  
I
C (Max.)  
100  
1
2
EMG2, UMG2N  
150 (TOTAL)  
300 (TOTAL)  
150  
Power  
Pd  
dissipation  
FMG2A  
Junction temperature  
Storage temperature  
Tj  
˚C  
˚C  
Tstg  
55 to +150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
Rev.A  
1/2  

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