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UMG4N

更新时间： 2024-11-15 08:24:11
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 224K
描述
DUAL NPN PRE-BIASED TRANSISTOR

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中文翻译

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UMG4N 数据手册

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UMG4N  
DUAL NPN PRE-BIASED TRANSISTOR  
Features  
•
•
•
•
•
Epitaxial Planar Die Construction  
Surface Mount Package Suited for Automated Assembly  
Simplifies Circuit Design and Reduces Board Space  
Lead Free/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
Mechanical Data  
SOT-353  
•
•
Case: SOT-353  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Finish – Matte Tin Annealed Over Alloy 42  
Leadframe. Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 2  
Ordering Information: See Page 2  
Weight: 0.006 grams (approximate)  
3
4
2
1
5
(3)  
R1  
(2)  
(1)  
R1  
•
•
•
(5)  
(4)  
TOP VIEW  
•
•
•
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
50  
50  
5
100  
Unit  
V
V
V
mA  
Collector Current  
Thermal Characteristics  
Characteristic  
Power Dissipation @TA = 25°C (Note 3)  
Symbol  
PD  
Value  
150  
Unit  
mW  
833  
Thermal Resistance, Junction to Ambient Air @TA = 25°C (Note 3)  
Operating and Storage Temperature Range  
°C/W  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
°C  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min  
50  
50  
5.0  
⎯
⎯
⎯
100  
Typ  
⎯
⎯
⎯
⎯
⎯
⎯
330  
250  
10  
Max  
⎯
⎯
Unit  
V
Test Condition  
I
I
I
C = 50μA, IE = 0  
C = 1mA, IB = 0  
V
V
⎯
E = 50μA, IC = 0  
CB = 50V, IE = 0  
EB = 4V, IC = 0  
0.5  
0.5  
0.3  
600  
⎯
μA  
μA  
V
V
V
Emitter Cut-Off Current  
IEBO  
Collector-Emitter Saturation Voltage  
DC Current Gain  
VCE(SAT)  
hFE  
IC = 10mA, IB = 1mA  
⎯
MHz  
V
V
CE = 5V, IC = 1mA  
Gain-Bandwidth Product (Note 4)  
Input Resistance  
fT  
⎯
7
CE = 10V, IE = -5mA, f = 100MHz  
13  
R1  
kΩ  
⎯
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
4. Characteristics of transistor. For reference only.  
DS31207 Rev. 3 - 2  
1 of 3  
UMG4N  
© Diodes Incorporated  
www.diodes.com  
123

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