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UD606G-S08-R PDF预览

UD606G-S08-R

更新时间: 2024-11-19 01:12:03
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
11页 575K
描述
DUAL ENHANCEMENT MODE

UD606G-S08-R 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
UD606  
Power MOSFET  
DUAL ENHANCEMENT MODE  
(N-CHANNEL/P-CHANNEL)  
DESCRIPTION  
SOP-8  
The UD606 can provide excellent RDS(ON) and low gate charge  
by using advanced trench technology MOSFETs. The UD606 may  
be used in H-bridge, inverters and other applications.  
1
FEATURES  
TO-252-5  
* N-Channel: 40V/8A  
R
R
DS(ON) < 33m@ VGS =10V, ID=8A  
DS(ON) < 55m@ VGS= 4.5V, ID=6A  
* P-Channel: -40V/-8A  
R
R
DS(ON) < 50m@ VGS= -10V, ID=-8A  
DS(ON) < 70m@ VGS= -4.5V, ID=-4A  
* Super high dense cell design  
* Reliable and rugged  
SYMBOL  
(3)  
D1/D2  
(5)  
G2  
(2)  
G1  
S2  
(4)  
S1  
(1)  
N-Channel  
P-Channel  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
UD606G-TN5-R  
UD606G-S08-R  
1
2
3
4
5
6
7
-
8
-
UD606L-TN5-R  
-
TO-252-5  
SOP-8  
S1 G1 D1/D2 S2 G2  
-
Tape Reel  
S1 G1  
S2  
G2 D2 D2 D1 D1 Tape Reel  
www.unisonic.com.tw  
Copyright © 2014 Unisonic Technologies Co., Ltd  
1 of 11  
QW-R502-169.C  

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