Datasheet > TTA007(TE85L)

TTA007(TE85L)

更新时间： 2024-09-17 09:13:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	198K
描述
TRANSISTOR,BJT,PNP,50V V(BR)CEO,1A I(C),SOT-23VAR

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技术参数
数据手册

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TTA007(TE85L) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	Is Samacsys：	N
最大集电极电流 (IC)：	1 A	配置：	Single
最小直流电流增益 (hFE)：	200	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	1.1 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

TTA007(TE85L) 数据手册

TTA007

TOSHIBA Transistor Silicon PNP Epitaxial Type

TTA007

Unit: mm

High-Speed Switching Applications

DC-DC Converter Applications

•

High DC current gain : h_FE= 200 to 500 (I_C= −0.1 A)

Low collector-emitter saturation voltage : V_CE(sat)= −0.2 V (max)

High-speed switching : t_f= 70 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

−7

−1

1. BASE

Collector current

Pulse

−2

2. EMITTER

3. COLLECTOR

Base current

−0.1

1.1

t = 10 s

JEDEC

JEITA

－

Collector power dissipation

(Note 1)

0.7

Junction temperature

150

°C

TOSHIBA

2-3S1C

Storage temperature range

−55 to150

stg

Weight: 0.01 g (typ.)

Note1: Mounted on FR4 board (glass epoxy; 645 mm²,1.6 mm thick;

Cu area: 645 mm²)

Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-02-08

12 3 4 5

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