Datasheet > TTA2097

TTA2097

更新时间： 2024-03-03 10:11:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	568K
描述
PNP Bipolar Transistor, -50 V, -5 A, New PW-Mold

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TTA2097 数据手册

TTA2097

Bipolar Transistors Silicon PNP Epitaxial Type

TTA2097

1. Applications

•

High-Speed Switching

•

DC-DC Converters

2. Features

(1) High DC current gain: hFE = 200 to 500 (VCE = -2 V, IC = -0.5 A)

(2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA)

(3) High-speed switching: tf = 60 ns (typ.) (IC = -1.6 A)

3. Packaging and Internal Circuit

1. Base

2. Collector (Heatsink)

3. Emitter

New PW-Mold

Start of commercial production

2023-07

Toshiba Electronic Devices & Storage Corporation

2023-08-18

Rev.2.0

12 3 4 5 6 7

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