Datasheet > TTA013

TTA013

更新时间： 2023-12-06 20:13:12

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	302K
描述
PNP Bipolar Transistor, -120 V, -2.5 A, PW-Mini

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

TTA013 数据手册

TTA013

Bipolar Transistors Silicon PNP Epitaxial Type

TTA013

1. Applications

•

High-Speed Switching

•

DC-DC Converters

2. Features

(1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A)

(2) Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 mA)

(3) High-speed switching: tf = 65 ns (typ.) (IC = -0.75 A)

3. Packaging and Internal Circuit

1. Base

2. Collector (Heatsink)

3. Emitter

PW-Mini

Start of commercial production

2022-10

2023-01-18

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
TTA014	TOSHIBA	获取价格	PNP Bipolar Transistor, -120 V, -2.5 A, New PW-Mold
TTA100D	ETC	获取价格	SINGLE BIDIRECTIONAL BREAKOVER DIODE\|180V V(BO) MAX\|300MA I(S)\|DO-201AD
TTA100S	ETC	获取价格	SINGLE BIDIRECTIONAL BREAKOVER DIODE\|180V V(BO) MAX\|300MA I(S)\|DO-214AB
TTA100T	ETC	获取价格	SINGLE BIDIRECTIONAL BREAKOVER DIODE\|180V V(BO) MAX\|300MA I(S)\|DO-214AB
TTA100Z	ETC	获取价格	SINGLE BIDIRECTIONAL BREAKOVER DIODE\|180V V(BO) MAX\|300MA I(S)\|PILL-B
TTA1452B	TOSHIBA	获取价格	TRANSISTOR POWER TRANSISTOR, BIP General Purpose Power
TTA145N08A	WUXI UNIGROUP	获取价格	Trench MOS这种新型垂直结构器件在VDMOS的基础上发展起来，和VDMOS相比，T
TTA150D	ETC	获取价格	SINGLE BIDIRECTIONAL BREAKOVER DIODE\|235V V(BO) MAX\|300MA I(S)\|DO-201AD
TTA150S	ETC	获取价格	SINGLE BIDIRECTIONAL BREAKOVER DIODE\|235V V(BO) MAX\|300MA I(S)\|DO-214AB
TTA150T	ETC	获取价格	SINGLE BIDIRECTIONAL BREAKOVER DIODE\|235V V(BO) MAX\|300MA I(S)\|TO-220AC