Datasheet > TTA501

TTA501

更新时间： 2024-11-06 14:56:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	253K
描述
PNP Bipolar Transistor, -50 V, -2 A, SOT-23F

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TTA501 数据手册

TTA501

Bipolar Transistors Silicon PNP Epitaxial Type

TTA501

1. Applications

•

High-Speed Switching

•

DC-DC Converters

2. Features

(1) AEC-Q101 qualified (Note 1)

(2) High DC current gain: hFE = 200 to 500 (IC = -0.3 A)

(3) Low collector-emitter saturation voltage: VCE(sat) = -0.2 V (max)

(4) High-speed switching: tf = 90 ns (typ.)

Note 1: For detail information, please contact our sales.

3. Packaging and Internal Circuit

1: Base

2: Emitter

3: Collector

SOT-23F

Start of commercial production

2020-12

2021-09-17

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7

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