TSI30H100CW - TSI30H200CW
Taiwan Semiconductor
30A, 100V - 200V Trench Schottky Rectifiers
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
1
2
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
3
I2PAK
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case: I2PAK
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" menas green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
TSI30H
100CW
100
TSI30H
120CW
120
TSI30H
150CW
150
TSI30H
200CW
200
PARAMETER
SYMBOL
VRRM
UNIT
Maximum repetitive peak reverse voltage
V
A
per device
per diode
30
15
Maximum average
IF(AV)
forward rectified current
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
200
A
Voltage rate of change (Rated VR)
10000
dV/dt
V/μs
TYP MAX TYP MAX TYP MAX TYP MAX
TJ = 25°C
0.69
0.61
-
0.78
0.68
250
35
0.75
0.64
-
0.84
0.73
250
35
0.81
0.68
-
0.90
0.77
150
20
0.84
0.70
-
0.92
0.79
150
20
Instantaneous forward
voltage per diode (Note1)
IF = 15A
VF
IR
V
TJ = 125°C
TJ = 25°C
TJ = 125°C
μA
mA
°C/W
°C
Instantaneous reverse current per
diode at rated reverse voltage
10
10
3
3
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
RθJC
TJ
2.7
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
Document Number: DS_D1411045
Version: C15