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TPCP8302 PDF预览

TPCP8302

更新时间： 2024-01-31 12:15:14
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
7页 234K
描述
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSコ)

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中文翻译

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TPCP8302 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.83
Is Samacsys：N配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：5 A
最大漏极电流 (ID)：5 A最大漏源导通电阻：0.045 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F8
JESD-609代码：e0元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：1.48 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：TIN LEAD
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

TPCP8302 数据手册

 浏览型号TPCP8302的Datasheet PDF文件第2页浏览型号TPCP8302的Datasheet PDF文件第3页浏览型号TPCP8302的Datasheet PDF文件第4页浏览型号TPCP8302的Datasheet PDF文件第5页浏览型号TPCP8302的Datasheet PDF文件第6页浏览型号TPCP8302的Datasheet PDF文件第7页 
TPCP8302  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)  
TPCP8302  
Lithium Ion Battery Applications  
Notebook PC Applications  
Unit: mm  
0.33±0.05  
Portable Equipment Applications  
A
M
0.05  
5
8
•
•
•
•
•
•
Lead (Pb)-free  
Small footprint due to small and thin package  
Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.)  
High forward transfer admittance: |Yfs| = 14 S (typ.)  
Low leakage current: IDSS = −10 μA (max) (VDS = −20 V)  
Enhancement model: Vth = −0.4 to −1.0V (VDS = −6 V, ID = −1 mA)  
0.475  
1
4
B
B
M
0.05  
0.65  
2.9±0.1  
A
0.8±0.05  
Absolute Maximum Ratings (Ta = 25°C)  
S
0.025  
+0.1  
S
0.28  
0.17±0.02  
-0.11  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
+0.13  
-0.12  
1.12  
1.12  
V
−20  
−20  
±12  
−5  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
+0.13  
-0.12  
GS  
DGR  
V
GSS  
+0.1  
0.28  
-0.11  
DC  
Pulse  
(Note 1)  
(Note 1)  
I
D
1. Source1  
2. Gate1  
5. Drain2  
6. Drain2  
7. Drain1  
8. Drain1  
Drain current  
A
I
−20  
DP  
3. Source2  
4. Gate2  
Single-device operation  
(Note 3a)  
P
P
P
P
1.48  
1.23  
0.58  
0.36  
D (1)  
Drain power  
dissipation  
Single-device value at  
dual operation (Note 3b)  
(t = 5 s) (Note 2a)  
D (2)  
D (1)  
D (2)  
JEDEC  
JEITA  
⎯
⎯
W
Single-device operation  
(Note 3a)  
Drain power  
dissipation  
Single-device value at  
dual operation (Note 3b)  
(t = 5 s) (Note 2b)  
TOSHIBA  
2-3V1G  
Weight: 0.017 g (typ.)  
Single-pulse avalanche energy  
Avalanche current  
(Note 4)  
E
6.5  
-5  
mJ  
A
AS  
I
AR  
Repetitive avalanche energy  
Single-device value at dual operation  
E
0.12  
mJ  
AR  
(Note 2a, 3b, 5)  
Channel temperature  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
stg  
−55 to 150  
Note: For Notes 1 to 6, see the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
Circuit Configuration  
Marking (Note 6)  
8
7
6
5
8
7
5
6
8302  
※
1
2
4
3
1
2
3
4
Lot No.  
1
2006-11-17  
1234567

中文翻译

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