Datasheet > TPCP8404(TE85L)

TPCP8404(TE85L)

更新时间： 2023-01-02 21:00:03

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
11页	286K
描述
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,4A I(D),TSOP

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TPCP8404(TE85L) 数据手册

TPCP8404

TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOⅤ/U-MOSⅣ)

TPCP8404

Portable Equipment Applications

Motor Drive Applications

Unit: mm

0.33±0.05

•

Low drain-source ON-resistance : P Channel R

= 38 mΩ(typ.)

(VGS=−10V)

= 38 mΩ(typ.)

DS (ON)

0.05

N Channel R

DS (ON)

（VGS=10V)

•

High forward transfer admittance : P Channel |Y | = 7.3 S (typ.)

N Channel |Y | = 8 S (typ.)

0.475

0.05

0.65

Low leakage current : P Channel I

= −10 μA (max) (V

= −30 V)

DSS

2.9±0.1

N Channel I

= 10 μA (max) (V

= 30 V)

DSS

0.8±0.05

Enhancement mode

: P Channel V = −0.8 to −2.0 V (V

= −10 V, I = −1 mA)

0.025

+0.1

0.28

0.17±0.02

-0.11

N Channel V = 1.3 to 2.5 V (V

= 10 V, I = 1 mA)

+0.13

-0.12

1.12

Absolute Maximum Ratings (Ta = 25°C)

+0.13

-0.12

Characteristics

Drain-source voltage

Symbol

Rating

Unit

+0.1

-0.11

1．Source1

2．Gate1

5．Drain2

6．Drain2

7．Drain1

8．Drain1

0.28

−30

±20

−4

±20

DSS

3．Source2

4．Gate2

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

JEDEC

JEITA

⎯

(Note 1)

Drain

current

Pulse

−16

Single-device operation

(Note 3a)

Drain power

dissipation

(t = 5 s)

1.48

1.23

0.58

0.36

1.48

1.23

0.58

0.36

D (1)

TOSHIBA

2-3V1G

Single-device value at

dual operation (Note 3b)

Weight: 0.017 g (typ.)

D (2)

D (1)

D (2)

(Note 2a)

Single-device operation

(Note 3a)

Drain power

dissipation

(t = 5 s)

Circuit Configuration

Single-device value at

dual operation (Note 3b)

(Note 2b)

Single pulse avalanche energy

(Note 4)

2.6

Avalanche current

−2

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

0.009

150

Channel temperature

°C

Marking (Note 6)

Storage temperature range

−55 to 150

stg

Note: For Notes 1 to 5, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

8404

This transistor is an electrostatic-sensitive device. Handle with caution.

Lot No.

2010-02-01

12 3 4 5 6 7...11

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