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TPCP8303(TE85L,F) PDF预览

TPCP8303(TE85L,F)

更新时间： 2024-02-02 13:35:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 221K
描述
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,3.8A I(D),TSOP

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TPCP8303(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
风险等级：5.61最大漏极电流 (Abs) (ID)：3.8 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：1.48 W子类别：Other Transistors
表面贴装：YESBase Number Matches：1

TPCP8303(TE85L,F) 数据手册

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TPCP8303  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV)  
TPCP8303  
Unit: mm  
Lithium Ion Battery Applications  
0.33±0.05  
Notebook PC Applications  
A
M
0.05  
5
8
Portable Equipment Applications  
•
•
•
•
Low drain-source ON-resistance: R  
High forward transfer admittance: |Y | = 12 S (typ.)  
= 41 mΩ (typ.)  
DS(ON)  
fs  
0.475  
1
4
Low leakage current: I  
= −10 μA (max) (V = −20 V)  
DS  
DSS  
B
B
M
0.05  
0.65  
Enhancement mode: V = −0.3 to −1.0 V (V = −10 V, I = −1 mA)  
th  
DS  
D
2.9±0.1  
A
0.8±0.05  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 Common)  
S
0.025  
+0.1  
S
0.28  
0.17±0.02  
-0.11  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
+0.13  
-0.12  
1.12  
1.12  
V
−20  
−20  
V
V
V
DSS  
+0.13  
-0.12  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
+0.1  
V
±8  
GSS  
0.28  
-0.11  
1. Source1  
2. Gate1  
5. Drain2  
6. Drain2  
7. Drain1  
8. Drain1  
DC  
Pulse  
(Note 1)  
(Note 1)  
I
−3.8  
−15.2  
D
Drain current  
A
I
DP  
3. Source2  
4. Gate2  
Single-device operation  
(Note 3a)  
P
P
P
P
1.48  
1.23  
0.58  
0.36  
D (1)  
Drain power  
dissipation  
(t = 5 s) (Note 2a)  
Single-device value at  
dual operation (Note 3b)  
JEDEC  
JEITA  
⎯
⎯
D (2)  
D (1)  
D (2)  
W
Single-device operation  
(Note 3a)  
Drain power  
dissipation  
(t = 5 s) (Note 2b)  
TOSHIBA  
2-3V1G  
Single-device value at  
dual operation (Note 3b)  
Weight: 0.017 g (typ.)  
Single-pulse avalanche energy  
Avalanche current  
(Note 4)  
E
18.8  
mJ  
A
AS  
I
−3.8  
AR  
Repetitive avalanche energy  
Single-device value at dual operation  
E
0.04  
mJ  
AR  
(Note 2a, 3b, 5)  
Channel temperature  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
stg  
−55 to 150  
Note: For Notes 1 to 6, see the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
Circuit Configuration  
Marking (Note 6)  
8
7
6
5
8
7
5
6
8303  
2
1
4
3
1
2
3
4
Lot No.  
1
2010-01-14  
1234567

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