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TPCA8024(TE12L,Q) PDF预览

TPCA8024(TE12L,Q)

更新时间: 2024-11-21 15:54:55
品牌 Logo 应用领域
东芝 - TOSHIBA PC
页数 文件大小 规格书
7页 230K
描述
TPCA8024(TE12L,Q)

TPCA8024(TE12L,Q) 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84Base Number Matches:1

TPCA8024(TE12L,Q) 数据手册

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TPCA8024  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)  
TPCA8024  
Lithium-Ion Battery Applications  
Unit: mm  
Notebook PC Applications  
0.4 ± 0.1  
1.27  
Portable Equipment Applications  
8
0.05 M A  
5
0.15 ± 0.05  
Small footprint due to a small and thin package  
Low drain-source ON-resistance: R = 3.5 mΩ (typ.)  
DS (ON)  
4
0.595  
A
High forward transfer admittance: |Y | = 72 S (typ.)  
fs  
1
Low leakage current: I  
= 10 μA (max) (V  
= 30 V)  
DSS  
DS  
Enhancement mode: V = 1.3 to 2.5 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
5.0 ± 0.2  
Absolute Maximum Ratings (Ta = 25°C)  
0.05 S  
S
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
4
1
V
30  
30  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
4.25 ± 0.2  
V
±20  
35  
GSS  
DC  
(Note 1)  
I
D
8
5
Drain current  
A
Pulse (Note 1)  
I
105  
35  
DP  
1,2,3: SOURCE  
5,6,7,8: DRAIN  
4: GATE  
Drain power dissipation  
Drain power dissipation  
(Tc=25)  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
P
W
W
D
D
P
2.8  
1.6  
JEDEC  
Drain power dissipation  
JEITA  
P
W
D
TOSHIBA  
2-5Q1A  
Single pulse avalanche energy  
(Note 3)  
E
159  
35  
mJ  
A
AS  
Weight: 0.069 g (typ.)  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
3.5  
mJ  
Circuit Configuration  
AR  
(Tc=25) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
8
7
6
5
-55 to 150  
Storage temperature range  
stg  
Note: For Note 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage,  
etc.) are within the absolute maximum ratings. Please design the  
appropriate reliability upon reviewing the Toshiba Semiconductor  
1
2
3
4
Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability  
test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2010-01-05  

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