Datasheet > TP0610T-G

TP0610T-G

更新时间： 2024-11-15 21:15:03

品牌	Logo	应用领域
超科 - SUPERTEX		开关光电二极管晶体管
页数	文件大小	规格书
5页	599K
描述
Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, 2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3

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技术参数
数据手册
替代型号

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TP0610T-G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	SOT-23
包装说明：	SMALL OUTLINE, R-PDSO-G3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	7.27
其他特性：	LOW THRESHOLD	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (ID)：	0.12 A
最大漏源导通电阻：	10 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	10 pF	JEDEC-95代码：	TO-236AB
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	0.36 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	MATTE TIN	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

TP0610T-G 数据手册

Supertex inc.

TP0610T

P-Channel Enhancement Mode

Vertical DMOS FETs

Features

General Description

► High input impedance and high gain

► Low power drive requirement

► Ease of paralleling

This low threshold enhancement-mode (normally-off) transistor

utilizes a vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination produces a

device with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefﬁcient inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and thermally-

induced secondary breakdown.

► Low C_ISSand fast switching speeds

► Excellent thermal stability

► Integral source-drain diode

► Free from secondary breakdown

Applications

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

► Logic level interfaces - ideal for TTL and CMOS

► Solid state relays

► Battery operated systems

► Photo voltaic systems

► Analog switches

► Power management

► Telecom switches

Ordering Information

R_DS(ON)

I_D(ON)

Package Options

BV_DSS/BV_DGS

Device

(max)

(Ω)

(min)

(mA)

(V)

TO-236AB (SOT-23)

TP0610T

TP0610T-G

-60

-50

For packaged products, -G indicates package is RoHS compliant (‘Green’).

Consult factory for die / wafer form part numbers.

Refer to Die Speciﬁcation VF21 for layout and dimensions.

Absolute Maximum Ratings

Pin Conﬁguration

Parameter

Value

BV_DSS

BV_DGS

±20V

DRAIN

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

SOURCE

Operating and storage temperature

-55^OC to +150^OC

GATE

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

TO-236AB (SOT-23) (T)

Product Marking

W = Code for week sealed

= “Green” Packaging

T50W

Package may or may not include the following marks: Si or

TO-236AB (SOT-23) (T)

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

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TP0610T-G 替代型号

型号	品牌	替代类型	描述	数据表
VP0610T	VISHAY	类似代替	P-Channel 60-V (D-S) MOSFET
TP0610KL-TR1-E3	VISHAY	功能相似	MOSFET P-CH 60V 270MA TO92-3
TP0610K-T1	VISHAY	功能相似	Transistor

与TP0610T-G相关器件

型号	品牌	获取价格	描述	数据表
TP0610TT1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
TP0610T-T1	VISHAY	获取价格	P-Channel 60-V (D-S) MOSFET
TP0610T-T1-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
TP0610TT2	TEMIC	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
TP0610TT2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
TP0610T-TR1-E3	VISHAY	获取价格	TRANSISTOR 120 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, LEAD FREE, TO-236,
TP0616N3	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
TP0616N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
TP0616N3P003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
TP0616N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta

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