TP0620N3

更新时间： 2024-11-14 22:19:19

品牌	Logo	应用领域
超科 - SUPERTEX		晶体小信号场效应晶体管开关输入元件
页数	文件大小	规格书
4页	477K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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TP0620N3 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	CYLINDRICAL, O-PBCY-W3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.25
Is Samacsys：	N	其他特性：	HIGH INPUT IMPEDANCE
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	200 V
最大漏极电流 (Abs) (ID)：	0.4 A	最大漏极电流 (ID)：	0.4 A
最大漏源导通电阻：	12 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	35 pF	JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-W3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	1 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WIRE	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TP0620N3 数据手册

TP0620

Low Threshold

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

I_D(ON)

(min)

V_GS(th)

(max)

TO-92

BV_DGS

-200V

12Ω

-0.75A

-2.4V

TP0620N3

^†MIL visual screening available

Low Threshold DMOS Technology

Features

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

❏

Low threshold — -2.4 V max

High input impedance

Low input capacitance — 85pF typical

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

Applications

❏

Logic level interfaces – ideal for TTL and CMOS

Package Option

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

S G D

BV_DSS

BV_DGS

± 20V

TO-92

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

12 3 4

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与TP0620N3相关器件

型号	品牌	获取价格	描述	数据表
TP0620N3-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.175A I(D), 200V, 1-Element, P-Channel, Silicon, Me
TP0620N3-GP002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor,
TP0620N3-GP003	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FET
TP0620N3-G-P003	SUPERTEX	获取价格	175mA, 200V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
TP0620N3-GP005	SUPERTEX	获取价格	SMALL SIGNAL, FET
TP0620N3-GP013	SUPERTEX	获取价格	SMALL SIGNAL, FET
TP0620N3-GP014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor,
TP0620N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, P-Channel, Silicon, Meta
TP0620N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, P-Channel, Silicon, Meta
TP0620N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, P-Channel, Silicon, Meta

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