TP0620N3-G

更新时间： 2024-11-15 13:14:51

品牌	Logo	应用领域
超科 - SUPERTEX		晶体小信号场效应晶体管开关输入元件
页数	文件大小	规格书
4页	477K
描述
Small Signal Field-Effect Transistor, 0.175A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

TP0620N3-G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-92
包装说明：	CYLINDRICAL, O-PBCY-T3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	7.86	Is Samacsys：	N
其他特性：	HIGH INPUT IMPEDANCE, LOGIC LEVEL COMPATIBLE	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	200 V	最大漏极电流 (ID)：	0.175 A
最大漏源导通电阻：	12 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	35 pF	JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
功耗环境最大值：	1 W	最大功率耗散 (Abs)：	1 W
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	Matte Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

TP0620N3-G 数据手册

TP0620

Low Threshold

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

I_D(ON)

(min)

V_GS(th)

(max)

TO-92

BV_DGS

-200V

12Ω

-0.75A

-2.4V

TP0620N3

^†MIL visual screening available

Low Threshold DMOS Technology

Features

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

❏

Low threshold — -2.4 V max

High input impedance

Low input capacitance — 85pF typical

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

Applications

❏

Logic level interfaces – ideal for TTL and CMOS

Package Option

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

S G D

BV_DSS

BV_DGS

± 20V

TO-92

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

12 3 4

中文翻译

下载PDF

TP0620N3-G 替代型号

型号	品牌	替代类型	描述	数据表
BS170	ONSEMI	功能相似	Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

与TP0620N3-G相关器件

型号	品牌	获取价格	描述	数据表
TP0620N3-GP002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor,
TP0620N3-GP003	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FET
TP0620N3-G-P003	SUPERTEX	获取价格	175mA, 200V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
TP0620N3-GP005	SUPERTEX	获取价格	SMALL SIGNAL, FET
TP0620N3-GP013	SUPERTEX	获取价格	SMALL SIGNAL, FET
TP0620N3-GP014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor,
TP0620N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, P-Channel, Silicon, Meta
TP0620N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, P-Channel, Silicon, Meta
TP0620N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, P-Channel, Silicon, Meta
TP0620N3P006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, P-Channel, Silicon, Meta

与TP0620N3-G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

11
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

4
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

30
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

13

产品中心

服务支持

精选活动

关于我们

帮助中心

TP0620N3-G

TP0620N3-G 技术参数

TP0620N3-G 数据手册

TP0620N3-G 替代型号

与TP0620N3-G相关器件

与TP0620N3-G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TP0620N3-G

TP0620N3-G 技术参数

TP0620N3-G 数据手册

TP0620N3-G 替代型号

与TP0620N3-G相关器件

与TP0620N3-G相关文章

您还可以找

您在本页遇到什么问题？