生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.83 |
其他特性: | LOW THRESHOLD | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 160 V | 最大漏极电流 (ID): | 0.4 A |
最大漏源导通电阻: | 12 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 35 pF | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | P-CHANNEL | 功耗环境最大值: | 1 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TP0616N3P015 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta | |
TP0616N3P016 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta | |
TP0616N3P017 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta | |
TP0616N3P018 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta | |
TP0619-752J | TDK |
获取价格 |
General Purpose Inductor, 7500uH, 5%, 1 Element | |
TP0619-822J | TDK |
获取价格 |
General Purpose Inductor, 8200uH, 5%, 1 Element | |
TP0620 | SUPERTEX |
获取价格 |
P-Channel Enhancement-Mode Vertical DMOS FETs | |
TP0620 | MICROCHIP |
获取价格 |
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS st | |
TP0620_13 | SUPERTEX |
获取价格 |
P-Channel Enhancement-Mode Vertical DMOS FET | |
TP0620N3 | SUPERTEX |
获取价格 |
P-Channel Enhancement-Mode Vertical DMOS FETs |