Datasheet > TP0616N3

TP0616N3

更新时间： 2024-11-15 21:13:31

品牌	Logo	应用领域
超科 - SUPERTEX		开关晶体管
页数	文件大小	规格书
4页	32K
描述
Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

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技术参数
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TP0616N3 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	CYLINDRICAL, O-PBCY-W3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.91
其他特性：	LOW THRESHOLD	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	160 V	最大漏极电流 (Abs) (ID)：	0.4 A
最大漏极电流 (ID)：	0.4 A	最大漏源导通电阻：	12 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	35 pF
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-W3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	1 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	WIRE
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

TP0616N3 数据手册

TP0616

TP0620

Low Threshold

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

I_D(ON)

(min)

V_GS(th)

(max)

TO-92

TO-220

—

BV_DGS

-160V

-200V

12Ω

-0.75A

-2.4V

TP0616N3

TP0620N3

TP0620N5

†

MIL visual screening available

High Reliability Devices

Low Threshold DMOS Technology

See pages 5-4 and 5-5 for MILITARY STANDARD Process

Flows and Ordering Information.

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Features

■ Low threshold — -2.4 V max

■ High input impedance

■ Low input capacitance — 85pF typical

■ Fast switching speeds

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

■ Low on resistance

■ Free from secondary breakdown

■ Low input and output leakage

■ Complementary N- and P-channel devices

Package Options

Applications

■ Logic level interfaces – ideal for TTL and CMOS

■ Solid state relays

■ Battery operated systems

■ Photo voltaic drives

■ Analog switches

■ General purpose line drivers

■ Telecom switches

Absolute Maximum Ratings

S G D

TO-220

Drain-to-Source Voltage

BV_DSS

TAB: DRAIN

TO-92

Drain-to-Gate Voltage

BV_DGS

± 20V

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

7-123

12 3 4

中文翻译

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与TP0616N3相关器件

型号	品牌	获取价格	描述	数据表
TP0616N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
TP0616N3P003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
TP0616N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
TP0616N3P006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
TP0616N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
TP0616N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
TP0616N3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
TP0616N3P012	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
TP0616N3P014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
TP0616N3P015	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 160V, 1-Element, P-Channel, Silicon, Meta

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