Datasheet > TN0106N3

TN0106N3

更新时间： 2024-10-27 22:19:27

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	31K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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TN0106N3 数据手册

TN0106

TN0110

Low Threshold

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

I_D(ON)

V_GS(th)

(max)

BV_DGS

(max)

(min)

TO-92

Die^†

60V

3.0Ω

2.0V

TN0106N3

TN0110N3

—

100V

TN0110ND

^†MIL visual screening available

Features

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

■ Low threshold — 2.0V max.

■ High input impedance

■ Low input capacitance — 50pF typical

■ Fast switching speeds

■ Low on resistance

■ Free from secondary breakdown

■ Low input and output leakage

■ Complementary N- and P-channel devices

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

Applications

■ Logic level interfaces – ideal for TTL and CMOS

Package Options

■ Solid state relays

■ Battery operated systems

■ Photo voltaic drives

■ Analog switches

■ General purpose line drivers

■ Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

S G D

TO-92

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

7-35

12 3 4

中文翻译

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TN0106N3 替代型号

型号	品牌	替代类型	描述	数据表
TN0106N3-G	SUPERTEX	功能相似	Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 1-Element, N-Channel, Silicon, Meta

与TN0106N3相关器件

型号	品牌	获取价格	描述	数据表
TN0106N3-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
TN0106N3-GP003	MICROCHIP	获取价格	Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
TN0106N3-GP005	MICROCHIP	获取价格	Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
TN0106N3-GP013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
TN0106N3-GP013	MICROCHIP	获取价格	350mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
TN0106N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
TN0106N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
TN0106N3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
TN0106N3P012	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
TN0106N3P013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal

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