Datasheet > TN0110N3-GP002

TN0110N3-GP002

更新时间： 2024-10-29 01:02:11

品牌	Logo	应用领域
超科 - SUPERTEX		开关晶体管
页数	文件大小	规格书
5页	635K
描述
N-Channel Enhancement-Mode Vertical DMOS FET

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TN0110N3-GP002 技术参数

生命周期：	Transferred	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	unknown	风险等级：	5.64
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	100 V
最大漏极电流 (ID)：	0.35 A	最大漏源导通电阻：	3 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	8 pF
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	N-CHANNEL	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

TN0110N3-GP002 数据手册

Supertex inc.

TN0110

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Low threshold - 2.0V max.

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

► High input impedance

► Low input capacitance - 50pF typical

► Fast switching speeds

► Low on-resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

► Logic level interfaces – ideal for TTL and CMOS

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Ordering Information

Product Summary

R_DS(ON)

V_GS(th)

(max)

2.0V

I_D(ON)

(min)

Part Number

Package Option

Packing

BV_DSS/BV_DGS

(max)

TN0110N3-G

TO-92

1000/Bag

100V

3.0Ω

2.0A

TN0110N3-G P002

TN0110N3-G P003

TN0110N3-G P005

TN0110N3-G P013

TN0110N3-G P014

TO-92

2000/Reel

Pin Conﬁguration

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

DRAIN

GATE

SOURCE

Absolute Maximum Ratings

Parameter

Value

TO-92

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

BV_DSS

BV_DGS

±20V

Product Marking

SiTN

0 1 1 0

YYWW

-55^OC to +150^OC

YY = Year Sealed

Operating and storage temperature

WW = Week Sealed

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

= “Green” Packaging

Package may or may not include the following marks: Si or

TO-92

Typical Thermal Resistance

Package

θ_ja

TO-92

132^OC/W

Doc.# DSFP-TN0110

C080813

Supertex inc.

www.supertex.com

12 3 4 5

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与TN0110N3-GP002相关器件

型号	品牌	获取价格	描述	数据表
TN0110N3-GP003	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN0110N3-GP005	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN0110N3-GP013	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN0110N3-GP014	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN0110N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Silicon, Meta
TN0110N3P002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Silicon, Meta
TN0110N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Silicon, Meta
TN0110N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Silicon, Meta
TN0110N3P006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Silicon, Meta
TN0110N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Silicon, Meta

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