Datasheet > TN0200K_07

TN0200K_07

更新时间： 2024-10-28 06:02:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	98K
描述
N-Channel 20-V (D-S) MOSFETs

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TN0200K_07 数据手册

New Product

TN0200K

Vishay Siliconix

N-Channel 20-V (D-S) MOSFETs

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

I_D(A)

ESD Protected: 4000 V

0.4 at V_GS= 4.5 V

0.5 at V_GS= 2.5 V

0.73

RoHS

COMPLIANT

APPLICATIONS

0.65

•

Direct Logic-Level Interface: TTL/CMOS

Drivers: Relays, Solenoids, Lamps, Hammers

Battery Operated Systems, DC/DC Converters

Solid-State Relays

Load/Power Switching-Cell Phones, Pagers

TO-236

(SOT-23)

Marking Code: K2ywl

100 Ω

K2 = Part Number Code for TN0200K

y = Year Code

w = Week Code

l = Lot Traceability

Top View

Ordering Information: TN0200K-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

T_A= 25 °C

T_A= 70 °C

0.73

0.58

Continuous Drain Current (T_J= 150 °C)^b

I_D

Pulsed Drain Current^a

Continuous Source Current (Diode Conduction)^b

I_DM

I_S

0.3

0.35

T_A= 25 °C

T_A= 70 °C

Power Dissipation^b

P_D

0.22

_J,T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambient^b

R_thJA

357

°C/W

Notes:

a. Pulse width limited by maximum junction temperature.

b. Surface Mounted on FR4 Board, t ≤ 10 sec.

Document Number: 72678

S-71198–Rev. B, 18-Jun-07

www.vishay.com

12 3 4 5

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