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TN0201L PDF预览

TN0201L

更新时间: 2024-10-28 22:19:27
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关
页数 文件大小 规格书
4页 47K
描述
N-Channel 20-, 30-, 40-V (D-S) MOSFETs

TN0201L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.86Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):0.64 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.8 W
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

TN0201L 数据手册

 浏览型号TN0201L的Datasheet PDF文件第2页浏览型号TN0201L的Datasheet PDF文件第3页浏览型号TN0201L的Datasheet PDF文件第4页 
TN0201L/0401L, VN0300L/LS  
Vishay Siliconix  
N-Channel 20-, 30-, 40-V (D-S) MOSFETs  
PRODUCT SUMMARY  
Part Number V(BR)DSS Min (V) rDS(on) Max (W)  
VGS(th) (V)  
ID (A)  
TN0201L  
TN0401L  
VN0300L  
VN0300LS  
20  
40  
30  
30  
1.2 @ V = 10 V  
0.5 to 2  
0.5 to 2  
0.64  
0.64  
0.64  
0.67  
GS  
1.2 @ V = 10 V  
GS  
1.2 @ V = 10 V  
0.8 to 2.5  
0.8 to 2.5  
GS  
1.2 @ V = 10 V  
GS  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: 0.85 W  
D Low Threshold: 1.4 V  
D Low Offset Voltage  
D Direct Logic-Level Interface: TTL/CMOS  
D Low-Voltage Operation  
D Easily Driven Without Buffer  
D High-Speed Circuits  
D Low Error Voltage  
D Drivers: Relays, Solenoids, Lamps, Hammers,  
Displays, Memories, Transistors, etc.  
D Low Input Capacitance: 38 pF  
D Fast Switching Speed: 9 ns  
D Low Input and Output Leakage  
D Battery Operated Systems  
D Solid-State Relays  
TO-226AA  
(TO-92)  
TO-92S  
(Copper Lead Frame)  
Device Marking  
Front View  
Device Marking  
Front View  
TN0201L  
1
1
2
3
S
G
D
S
G
D
“S” TN  
0201L  
xxyy  
VN0300LS  
“S” VN  
0300LS  
xxyy  
2
TN0401L  
“S” = Siliconix Logo  
xxyy = Date Code  
“S” TN  
0401L  
xxyy  
3
“S” = Siliconix Logo  
xxyy = Date Code  
Top View  
Top View  
VN0300L  
“S” VN  
0300L  
xxyy  
TN0201L  
TN0401L  
VN0300L  
VN0300LS  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
TN0201L  
TN0401L  
VN0300L VN0300LS  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
20  
"20  
0.64  
0.38  
1.5  
40  
"20  
0.64  
0.38  
1.5  
30  
"30  
0.64  
0.38  
3
30  
"30  
0.67  
0.43  
3
DS  
GS  
V
T = 25_C  
A
A
Continuous Drain Current  
I
D
(T = 150_C)  
Pulsed Drain Current  
J
T = 100_C  
A
a
I
DM  
T = 25_C  
A
0.8  
0.8  
0.8  
0.9  
A
Power Dissipation  
P
W
D
T = 100_C  
0.32  
156  
0.32  
156  
0.32  
156  
0.4  
Thermal Resistance, Junction-to-Ambient  
R
thJA  
156  
_C/W  
_C  
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
stg  
Notes  
a. Pulse width limited by maximum junction temperature.  
Document Number: 70199  
S-04279—Rev. E, 16-Jul-01  
www.vishay.com  
11-1  

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