Datasheet > TN0201T-E3

TN0201T-E3

更新时间： 2024-02-27 04:22:42

品牌	Logo	应用领域
威世 - VISHAY		开关光电二极管晶体管
页数	文件大小	规格书
5页	56K
描述
Small Signal Field-Effect Transistor, 0.39A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3

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技术参数
数据手册

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TN0201T-E3 技术参数

生命周期：	Obsolete	零件包装代码：	SOT-23
包装说明：	SMALL OUTLINE, R-PDSO-G3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.26
其他特性：	LOW THRESHOLD	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	0.39 A
最大漏源导通电阻：	1 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-236	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TN0201T-E3 数据手册

TN0201T

Vishay Siliconix

N-Channel 20–V (D–S) MOSFET

PRODUCT SUMMARY

V_(BR)DSSMin (V) r_DS(on)Max (W)

V_GS(th)(V)

I_D(A)

1.0 @ V = 10 V

1.0 to 3.0

0.39

1.4 @ V = 4.5 V

FEATURES

BENEFITS

APPLICATIONS

D Low On-Resistance: 0.75 W

D Low Threshold: <1.75 V

D Low Offset Voltage

D Direct Logic-Level Interface: TTL/CMOS

D Low-Voltage Operation

D Easily Driven Without Buffer

D High-Speed Circuits

D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories, Transistors, etc.

D Low Input Capacitance: 65 pF

D Fast Switching Speed: 15 ns

D Battery Operated Systems

D Solid-State Relays

D Low Input and Output Leakage D Low Error Voltage

TO-236

(SOT-23)

Marking Code: N1wll

N1 = Part Number Code for TN0201T

w = Week Code

ll = Lot Traceability

Top View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

T = 25_C

0.39

Continuous Drain Current (T = 150__C)

T = 70_C

0.25

Pulsed Drain Current

0.75

T = 25_C

0.35

Power Dissipation

T = 70_C

0.22

Thermal Resistance, Junction-to-Ambient

thJA

357

_C/W

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

Notes

a. Pulse width limited by maximum junction temperature.

Document Number: 70200

S-04279—Rev. E, 16-Jul-01

www.vishay.com

11-1

12 3 4 5

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