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TN0200T

更新时间: 2024-10-27 22:19:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 67K
描述
N-Channel 20-V (D-S) MOSFETs

TN0200T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84配置:Single
最大漏极电流 (Abs) (ID):0.6 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.23 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

TN0200T 数据手册

 浏览型号TN0200T的Datasheet PDF文件第2页浏览型号TN0200T的Datasheet PDF文件第3页浏览型号TN0200T的Datasheet PDF文件第4页 
TN0200T/TS  
Vishay Siliconix  
N-Channel 20-V (D-S) MOSFETs  
PRODUCT SUMMARY  
ID (A)  
TN0200T TN0200TS  
VDS (V)  
rDS(on) (W)  
0.4 @ V = 4.5 V  
0.73  
0.65  
1.2  
1.1  
GS  
20  
0.5 @ V = 2.5 V  
GS  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: 0.29 W  
D Low Threshold: 0.9 V (typ)  
D 2.5-V or Lower Operation  
D Fast Switching Speed: 22 ns  
D Low Offset Voltage  
D Low-Voltage Operation  
D High-Speed Circuits  
D Low Error Voltage  
D Direct Logic-Level Interfact: TTL/CMOS  
D Dirvers: Relays, Solenoids, Lamps, Hammers  
D Battery Operated Systems, DC/DC Converters  
D Solid-State Relays  
D Low Input and Output  
D Low Battery Voltage  
D Load/Power SwitchingCell Phones, Pagers  
Leakage  
Operation  
TO-236  
(SOT-23)  
Top View  
Marking Code:  
G
S
1
2
TN0200T: NOwll  
TN0200TS: NSwll  
3
D
w = Week Code  
ll = Lot Traceability  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
TN0200T  
TN0200TSc Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
20  
"8  
0.73  
0.58  
4
20  
DS  
GS  
V
"8  
T = 25_C  
1.2  
1.0  
A
b
Continuous Drain Current (T = 150__C)  
I
J
D
T = 70_C  
A
A
a
Pulsed Drain Current  
I
4
DM  
b
Continuous Source Current (Diode Conduction)  
I
0.6  
1.0  
1.0  
S
T = 25_C  
0.35  
0.22  
A
b
Power Dissipation  
P
W
D
T = 70_C  
A
0.65  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
TN0200T  
TN0200TSc Unit  
b
Maximum Junction-to-Ambient  
R
thJA  
357  
125  
_C/W  
Notes  
a. Pulse width limited by maximum junction temperature.  
b. Surface Mounted on FR4 Board, t v 10 sec.  
c. Copper lead frame.  
Document Number: 70202  
S-40277—Rev. F, 23-Feb-04  
www.vishay.com  
1
 

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