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TN0201K-T1-E3 PDF预览

TN0201K-T1-E3

更新时间: 2024-10-28 22:06:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 78K
描述
N-Channel 20−V (D−S) MOSFET

TN0201K-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.64
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):0.42 A
最大漏极电流 (ID):0.42 A最大漏源导通电阻:1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TN0201K-T1-E3 数据手册

 浏览型号TN0201K-T1-E3的Datasheet PDF文件第2页浏览型号TN0201K-T1-E3的Datasheet PDF文件第3页浏览型号TN0201K-T1-E3的Datasheet PDF文件第4页浏览型号TN0201K-T1-E3的Datasheet PDF文件第5页 
TN0201K/TN0201KL  
Vishay Siliconix  
New Product  
N-Channel 20V (DS) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
APPLICATIONS  
ID (A)  
V(BR)DSS  
Min (V)  
rDS(on)  
TN0201K TN0201KL  
Max (W)  
VGS(th) (V)  
D Direct Logic-Level Interface: TTL/CMOS  
1.0 @ V = 10 V  
GS  
0.42  
0.35  
0.64  
0.53  
D Drivers: Relays, Solenoids, Lamps, Hammers,  
20  
1.0 to 3.0  
Displays, Memories, Transistors, etc.  
1.4 @ V = 4.5 V  
GS  
D Battery Operated Systems  
D Solid-State Relays  
TO-236  
(SOT-23)  
TO-226AA  
(TO-92)  
1
2
3
Device Marking  
Front View  
S
G
D
G
S
1
2
3
D
“S” TN  
0201KL  
xxyy  
“S” = Siliconix Logo  
xxyy = Date Code  
Top View  
TN0201K  
Top View  
Marking Code: K3ywl  
TN0201KL  
K3 = Part Number Code for TN0201K  
y = Year Code  
w = Week Code  
l = Lot Traceability  
Ordering Information: TN0201K-T1—E3 (Lead Free)  
Ordering Information: TN0201KL-TR1  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Limit  
TN0201K  
TN0201KL  
Parameter  
Symbol  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
DS  
GS  
V
V
"20  
T = 25_C  
A
0.42  
0.33  
0.8  
0.64  
0.51  
1.5  
A
Continuous Drain Current (T = 150__C)  
I
J
D
T = 70_C  
A
a
Pulsed Drain Current  
I
DM  
T = 25_C  
A
0.35  
0.22  
357  
0.8  
A
Power Dissipation  
P
W
D
T = 70_C  
0.51  
156  
Thermal Resistance, Junction-to-Ambient  
R
thJA  
_C/W  
_C  
Operating Junction and Storage Temperature Range  
T , T  
J
55 to 150  
stg  
Notes  
a. Pulse width limited by maximum junction temperature.  
Document Number: 72671  
S-40245—Rev. A, 16-Feb-04  
www.vishay.com  
1
 

TN0201K-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
2N7002K-T1-E3 VISHAY

类似代替

N-Channel 60-V (D-S) MOSFET
BS170 ONSEMI

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