生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.73 | 其他特性: | N-F, I/P POWER-MAX(PEAK)=1000W |
特性阻抗: | 50 Ω | 构造: | COAXIAL |
最大输入功率 (CW): | 50 dBm | JESD-609代码: | e4 |
最大工作频率: | 1500 MHz | 最小工作频率: | |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
射频/微波设备类型: | RF/MICROWAVE TERMINATION | 端子面层: | GOLD |
最大电压驻波比: | 1.2 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TN010F-150W | APITECH |
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RF/Microwave Termination, 0MHz Min, 1500MHz Max, 50ohm, ROHS COMPLIANT PACKAGE | |
TN010F-300W | APITECH |
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RF/Microwave Termination, 0MHz Min, 1500MHz Max, 50ohm, ROHS COMPLIANT PACKAGE | |
TN010M-100W | APITECH |
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RF/Microwave Termination, 0MHz Min, 1500MHz Max, 50ohm, ROHS COMPLIANT PACKAGE | |
TN010M-150W | APITECH |
获取价格 |
RF/Microwave Termination, 0MHz Min, 1500MHz Max, 50ohm, ROHS COMPLIANT PACKAGE | |
TN010M-300W | APITECH |
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RF/Microwave Termination, 0MHz Min, 1500MHz Max, 50ohm, ROHS COMPLIANT PACKAGE | |
TN0110 | SUPERTEX |
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N-Channel Enhancement-Mode Vertical DMOS FETs | |
TN0110 | MICROCHIP |
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This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS st | |
TN0110_13 | SUPERTEX |
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N-Channel Enhancement-Mode Vertical DMOS FET | |
TN0110N3 | SUPERTEX |
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N-Channel Enhancement-Mode Vertical DMOS FETs | |
TN0110N3-G | MICROCHIP |
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350mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |