TN0110
N-Channel Enhancement-Mode Vertical DMOS FET
Features
General Description
• 2V Maximum Low Threshold
• High Input Impedance
The TN0110 low-threshold Enhancement-mode
(normally-off) transistor uses a vertical DMOS structure
and a well-proven silicon-gate manufacturing process.
This combination produces a device with the power
handling capabilities of bipolar transistors and the high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally induced secondary breakdown.
• 50 pF Typical Low Input Capacitance
• Fast Switching Speeds
• Low On-Resistance
• Free from Secondary Breakdown
• Low Input and Output Leakage
Applications
Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
• Logic-Level Interfaces (Ideal for TTL and CMOS)
• Solid-State Relays
• Battery-Operated Systems
• Photovoltaic Drives
• Analog Switches
• General Purpose Line Drivers
• Telecommunication Switches
Package Type
3-lead TO-92
(Top view)
DRAIN
SOURCE
GATE
See Table 3-1 for pin information.
2020 Microchip Technology Inc.
DS20006417A-page 1