Datasheet > TN0106N3-GP003

TN0106N3-GP003

更新时间： 2024-10-29 03:26:59

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
5页	602K
描述
Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, ROHS COMPLIANT PACKAGE-3

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TN0106N3-GP003 数据手册

Supertex inc.

TN0106

N-Channel Enhancement-Mode

Vertical DMOS FET

General Description

Features

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

► Low threshold - 2.0V max.

► High input impedance

► Low input capacitance - 50pF typical

► Fast switching speeds

► Low on-resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

► Logic level interfaces – ideal for TTL and CMOS

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches

Ordering Information

Product Summary

R_DS(ON)

V_GS(th)

(max)

2.0V

I_D(ON)

(min)

Part Number

Package Option

Packing

BV_DSS/BV_DGS

(max)

TN0106N3-G

TO-92

1000/Bag

60V

3.0Ω

2.0A

TN0106N3-G P002

TN0106N3-G P003

TN0106N3-G P005

TN0106N3-G P013

TN0106N3-G P014

Pin Conﬁguration

TO-92

2000/Reel

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

DRAIN

GATE

SOURCE

Absolute Maximum Ratings

Parameter

Value

BV_DSS

BV_DGS

±20V

TO-92

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Product Marking

-55^OC to +150^OC

SiTN

Operating and storage temperature

YY = Year Sealed

0 1 0 6

YYWW

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

WW = Week Sealed

= “Green” Packaging

Package may or may not include the following marks: Si or

TO-92

Typical Thermal Resistance

Package

θ_ja

TO-92

132^OC/W

Doc.# DSFP-TN0106

C080813

Supertex inc.

www.supertex.com

12 3 4 5

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与TN0106N3-GP003相关器件

型号	品牌	获取价格	描述	数据表
TN0106N3-GP005	MICROCHIP	获取价格	Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
TN0106N3-GP013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
TN0106N3-GP013	MICROCHIP	获取价格	350mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
TN0106N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
TN0106N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
TN0106N3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
TN0106N3P012	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
TN0106N3P013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
TN0106N3P014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
TN0106N3P017	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal

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