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TK370A60F PDF预览

TK370A60F

更新时间: 2024-11-24 14:56:43
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 399K
描述
N-ch MOSFET, 600 V, 0.37 Ω@10V, TO-220SIS, π-MOSⅨ

TK370A60F 数据手册

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TK370A60F  
MOSFETs Silicon N-Channel MOS (π-MOS)  
TK370A60F  
1. Applications  
Switching Power Supplies  
2. Features  
(1) Easy to control Gate switching  
(2) Low drain-source on-resistance: RDS(ON) = 0.3 (typ.)  
(3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 2.04 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain  
3: Source  
TO-220SIS  
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
VDSS  
VGSS  
ID  
600  
±30  
15  
(Note 1)  
(Note 1)  
A
IDP  
60  
(Tc = 25 )  
PD  
45  
W
mJ  
A
Single-pulse avalanche energy  
Single-pulse avalanche current  
Reverse drain current (DC)  
Reverse drain current (pulsed)  
Channel temperature  
(Note 2)  
EAS  
574  
15  
IAS  
(Note 1)  
(Note 1)  
IDR  
15  
IDRP  
Tch  
60  
150  
-55 to 150  
2000  
0.6  
Storage temperature  
Tstg  
Isolation voltage (RMS)  
Mounting torque  
(t = 1.0 s)  
VISO(RMS)  
TOR  
V
Nm  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
2018-12  
©2018  
Toshiba Electronic Devices & Storage Corporation  
2018-11-20  
Rev.1.0  
1

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