Datasheet > TK35E08N1

TK35E08N1

更新时间： 2024-11-14 14:56:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	245K
描述
N-ch MOSFET, 80 V, 0.0122 Ω@10V, TO-220, U-MOSⅧ-H

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TK35E08N1 数据手册

TK35E08N1

MOSFETs Silicon N-channel MOS (U-MOS-H)

TK35E08N1

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V)

(2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)

(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

TO-220

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

±20

(Tc = 25)

(Note 1)

(Note 1), (Note 2)

(Note 1)

(t = 1 ms)

IDP

116

(Tc = 25)

Single-pulse avalanche energy

Avalanche current

(Note 3)

EAS

IAR

Channel temperature

Storage temperature

Tch

Tstg

150

-55 to 150



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2012-04

2014-06-30

Rev.4.0

12 3 4 5 6 7...9

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