Datasheet > TK35S04K3L

TK35S04K3L

更新时间： 2024-11-13 12:34:59

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
9页	251K
描述
MOSFETs Silicon N-channel MOS (U-MOS IV)

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TK35S04K3L 数据手册

TK35S04K3L

MOSFETs Silicon N-channel MOS (U-MOS )

TK35S04K3L

1. Applications

•

Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V)

(2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

(3) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

DPAK+

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

±20

(Note 1)

IDP

(Tc = 25)

Single-pulse avalanche energy

Avalanche current

(Note 2)

EAS

IAR

Channel temperature

Storage temperature

(Note 3)

Tch

Tstg

175

-55 to 175



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2012-02-02

Rev.3.0

12 3 4 5 6 7...9

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