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TIP36B PDF预览

TIP36B

更新时间： 2024-01-31 18:04:16
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管开关局域网
页数 文件大小 规格书
6页 97K
描述
PNP SILICON POWER TRANSISTORS

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中文翻译

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TIP36B 技术参数

生命周期：Contact Manufacturer包装说明：,
Reach Compliance Code：unknown风险等级：5.57
Base Number Matches：1

TIP36B 数据手册

 浏览型号TIP36B的Datasheet PDF文件第2页浏览型号TIP36B的Datasheet PDF文件第3页浏览型号TIP36B的Datasheet PDF文件第4页浏览型号TIP36B的Datasheet PDF文件第5页浏览型号TIP36B的Datasheet PDF文件第6页 
TIP36, TIP36A, TIP36B, TIP36C  
PNP SILICON POWER TRANSISTORS  
Copyright © 1997, Power Innovations Limited, UK  
JULY 1968 - REVISED MARCH 1997  
●
Designed for Complementary Use with the  
TIP35 Series  
SOT-93 PACKAGE  
(TOP VIEW)  
●
●
●
●
125 W at 25°C Case Temperature  
25 A Continuous Collector Current  
40 A Peak Collector Current  
B
C
E
1
2
3
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIP36  
-80  
-100  
-120  
-140  
-40  
TIP36A  
TIP36B  
TIP36C  
TIP36  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
VCBO  
V
TIP36A  
TIP36B  
TIP36C  
-60  
VCEO  
V
-80  
-100  
-5  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
-25  
-40  
A
-5  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
125  
W
W
mJ  
°C  
°C  
°C  
3.5  
2
½LIC  
90  
Operating junction temperature range  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
250  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp £ 0.3 ms, duty cycle £ 10%.  
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 W,  
VBE(off) = 0, RS = 0.1 W, VCC = -20 V.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
123456

中文翻译

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TIP36B 替代型号

型号 品牌 替代类型 描述 数据表
BD250A-S BOURNS

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 Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
BD250-S BOURNS

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TIP36AG ONSEMI

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