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TIP36C

更新时间: 2024-11-29 03:59:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关PC局域网
页数 文件大小 规格书
6页 161K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

TIP36C 数据手册

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Order this document  
by TIP35A/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . for general–purpose power amplifier and switching applications.  
25 A Collector Current  
Low Leakage Current — I  
Excellent DC Gain — h  
High Current Gain Bandwidth Product —  
f = 1.0 MHz  
= 1.0 mA @ 30 and 60 V  
CEO  
= 40 Typ @ 15 A  
FE  
h = 3.0 min @ I = 1.0 A,  
fe C  
MAXIMUM RATINGS  
TIP35A TIP35B TIP35C  
TIP36A TIP36B TIP36C  
*Motorola Preferred Device  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
25 AMPERE  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
60100 VOLTS  
125 WATTS  
V
CEO  
60 V  
60 V  
80 V  
80 V  
5.0  
100 V  
100 V  
V
CB  
V
EB  
Collector Current — Continuous  
Peak (1)  
I
C
25  
40  
Base Current — Continuous  
Total Power Dissipation  
I
5.0  
Adc  
B
P
D
@ T = 25 C  
125  
1.0  
Watts  
W/ C  
C
Derate above 25 C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
65 to +150  
C
Unclamped Inductive Load  
E
SB  
90  
mJ  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
CASE 340D–02  
TO–218AC  
Thermal Resistance, Junction to Case  
R
R
1.0  
θJC  
Junction–To–Free–Air Thermal Resistance  
35.7  
θJA  
(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle  
10%.  
125  
100  
75  
50  
25  
0
0
25  
50  
75  
125  
C)  
150  
175  
100  
T
, CASE TEMPERATURE (  
°
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1996

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