Datasheet > TIP36C_01

TIP36C_01

更新时间： 2024-11-04 12:20:23

品牌	Logo	应用领域
KEC		晶体晶体管
页数	文件大小	规格书
2页	295K
描述
TRIPLE DIFFUSED PNP TRANSISTOR

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中文翻译

获取价格

数据手册

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TIP36C_01 数据手册

SEMICONDUCTOR

TIP36C

TRIPLE DIFFUSED PNP TRANSISTOR

TECHNICAL DATA

HIGH POWER AMPLIFIER APPLICATION.

FEATURES

Recommended for 75W Audio Frequency

Amplifier Output Stage.

Complementary to TIP35C.

Icmax:-25A.

DIM MILLIMETERS

15.9 MAX

4.8 MAX

20.0+0.3

2.0+0.3

1.0+0.3/-0.25

2.0

1.0

3.3 MAX

9.0

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

4.5

2.0

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-100

-5

UNIT

1.8 MAX

20.5 0.5

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

2.8

5.45+0.2

Φ3.2 0.2

0.6+0.3/-0.1

1. BASE

2. COLLECTOR

3. EMITTER

-25

I_B

Base Current

-5.0

Collector Power Dissipation

P_C

TO-3P(N)

125

(Tc=25

)

T_j

Junction Temperature

150

T_stg

Storage Temperature Range

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

V_CB=-100V, I_E=0

MIN.

TYP.

MAX.

-10

UNIT

I_EBO

V_EB=-5V, I_C=0

Emitter Cut-off Current

V_(BR)CEO

h_FE(1) (Note)

h_FE(2)

I_C=-50mA, I_B=0

V_CE=-5V, I_C=-1.5A

V_CE=-4V, I_C=-15A

I_C=-15A, I_B=-1.5A

I_C=-25A, I_B=-5.0A

V_CE=-5V, I_C=-5A

V_CE=-5V, I_C=-1A

Collector-emitter Breakdown Voltage

-100

160

DC Current Gain

V_CE(sat)(1)

V_CE(sat)(2)

V_BE

-1.8

-4.0

-1.5

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

f_T

3.0

MHz

Note : h_FE(1) Classification R:55~110, O:80~160

2001. 1. 18

Revision No : 3

1/2

中文翻译

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