生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | 风险等级: | 5.59 |
最大集电极电流 (IC): | 25 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 55 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 125 W | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 3 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TIP36CL-T3P-K | UTC |
获取价格 |
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
TIP36CL-X-T3N-T | UTC |
获取价格 |
HIGH POWER TRANSISTORS | |
TIP36CL-X-T3P-T | UTC |
获取价格 |
HIGH POWER TRANSISTORS | |
TIP36CP | STMICROELECTRONICS |
获取价格 |
Complementary power transistors | |
TIP36C-S | BOURNS |
获取价格 |
Transistor | |
TIP36C-T3P-K | UTC |
获取价格 |
HIGH POWER TRANSISTORS | |
TIP36CW | STMICROELECTRONICS |
获取价格 |
Complementary Silicon High Power Transistors | |
TIP36D | ISC |
获取价格 |
Silicon PNP Power Transistor | |
TIP36D | NJSEMI |
获取价格 |
"BJT | |
TIP36D | MOSPEC |
获取价格 |
POWER TRANSISTORS(25A,120-160V,125W) |