Datasheet > TIP41

TIP41

更新时间： 2024-11-04 08:48:39

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页数	文件大小	规格书
3页	132K
描述
NPN Silicon Power Transistor

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中文翻译

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数据手册

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TIP41 数据手册

TIP41 Series

NPN Silicon Power Transistor

P b

Lead(Pb)-Free

COLLECTOR

BASE

FEATURES:

* Medium Power Linear Switching Applications

1. BASE

2. COLLECTOR

3. EMITTER

TO-220

EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

Parameter

TIP41A

Units

TIP41

TIP41B TIP41C

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

100

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

℃

T_J

150

T_stg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

TIP41

TIP41A

TIP41B

TIP41C

TIP41

Collector-base breakdown voltage

I_C=1mA, I

_E=0

V_(BR)CBO

100

TIP41A

TIP41B

TIP41C

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

I_C=30mA, I

_B=0

100

I_E= 1mA, I

V_CB=40V, I

_C=0

TIP41

TIP41A

TIP41B

TIP41C

_E=0

_CB=60V, I

Collector cut-off current

0.4

V_CB=80V, I

V_CB=100V, I_E=0

TIP41/41A

V_CE=30V, I_B=0

I_CEO

Collector cut-off current

Emitter cut-off current

0.7

TIP41B/41C

V_CE=60V, I_B

I_EBO

V_EB=5V, I_C=0

h_FE(1)

V_CE=4V, I

_C=0.3A

DC current gain

h_FE(2)

V_CE=4V, I

_C=3A

1.5

V_{CE (sat)}I_C=6A, I_B=0.6A

V_CE=4V, I

Collector-emitter saturation voltage

Base-emitter voltage

_C=6A

V_BE(on)

V_CE=10V, I_C=0.5A

f = 1MHz

MHz

Transition Frequency

f _T

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