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TIP41 PDF预览

TIP41

更新时间： 2024-11-04 08:48:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
6页 94K
描述
Complementary Silicon Plastic Power Transistors

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中文翻译

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TIP41 数据手册

 浏览型号TIP41的Datasheet PDF文件第2页浏览型号TIP41的Datasheet PDF文件第3页浏览型号TIP41的Datasheet PDF文件第4页浏览型号TIP41的Datasheet PDF文件第5页浏览型号TIP41的Datasheet PDF文件第6页 
TIP41, TIP41A, TIP41B,  
TIP41C (NPN); TIP42, TIP42A,  
TIP42B, TIP42C (PNP)  
Complementary Silicon  
Plastic Power Transistors  
http://onsemi.com  
Designed for use in general purpose amplifier and switching  
applications.  
6 AMPERE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
40-60-80-100 VOLTS,  
65 WATTS  
Features  
•ꢀESD Ratings:  
Machine Model, C; > 400 V  
Human Body Model, 3B; > 8000 V  
•ꢀEpoxy Meets UL 94 V-0 @ 0.125 in  
•ꢀPb-Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
MARKING  
DIAGRAM  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
TIP41, TIP42  
TIP41A, TIP42A  
TIP41B, TIP42B  
TIP41C, TIP42C  
V
CEO  
40  
60  
80  
100  
Vdc  
4
Collector-Base Voltage  
TIP41, TIP42  
TIP41A, TIP42A  
TIP41B, TIP42B  
TIP41C, TIP42C  
V
40  
60  
80  
100  
Vdc  
TO-220AB  
CASE 221A  
STYLE 1  
CB  
TIP4xxG  
AYWW  
1
2
3
Emitter-Base Voltage  
Collector Current-  
V
5.0  
Vdc  
Adc  
EB  
Continuous  
Peak  
I
6.0  
10  
C
TIP4xx = Device Code  
= 1, 1A, 1B, 1C  
2, 2A, 2B, 2C  
Base Current  
I
2.0  
Adc  
B
xx  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
65  
0.52  
W
W/°C  
C
D
A
= Assembly Location  
= Year  
Y
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
2.0  
0.016  
W
W/°C  
A
D
WW  
G
= Work Week  
= Pb-Free Package  
Unclamped Inductive Load Energy  
(Note 1)  
E
62.5  
mJ  
Operating and Storage Junction,  
Temperature Range  
T , T  
J
–ꢁ65 to  
+150  
°C  
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.67  
57  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
R
q
JC  
R
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. I = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V = 10 V, R = 100 W.  
BE  
C
CC  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
November, 2007 - Rev. 7  
1
Publication Order Number:  
TIP41A/D  
 
123456

中文翻译

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TIP41 替代型号

型号 品牌 替代类型 描述 数据表
TIP41CG ONSEMI

类似代替

 Complementary Silicon Plastic Power Transistors
TIP127G ONSEMI

类似代替

 Plastic Medium-Power Complementary Silicon Transistors
BD682G ONSEMI

功能相似

 Plastic Medium−Power Silicon PNP Darlingtons

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