Datasheet > TIP41A

TIP41A

更新时间： 2024-11-04 03:59:43

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
1页	59K
描述
Plastic-Encapsulated Transistors

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中文翻译

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数据手册

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TIP41A 数据手册

Transys

Electronics

I M I T E D

TO-220 Plastic-Encapsulated Transistors

TO-220

TIP41A/41B/41C TRANSISTOR (NPN)

FEATURES

1. BASE

Power dissipation

2. COLLECTOR

3. EMITTER

P_CM:

W (Tamb=25℃)

Collector current

I_CM:

1 2 3

Collector-base voltage

V_(BR)CBO: TIP41A : 60

TIP41B : 80

TIP41C : 100 V

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

41A

41B

41C

41A

41B

41C

V(BR)

Ic= 1mA, I_E=0

Collector-base breakdown voltage

CBO

100

V(BR)

Ic= 30mA, I_B=0

I_E= 1mA, I_C=0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

CEO

100

V(BR)

EBO

41A

41B

41C

V_CB=60V, I_E=0

V_CB=80V, I_E=0

V_CB=100V, I_E=0

I_CBO

0.4

Collector cut-off current

_CE= 30V, I_B= 0

_CE= 60V, I_B= 0

41A

41B

41C

I_CEO

0.7

Collector cut-off current

Emitter cut-off current

I_EBO

V_EB=5V, I_C=0

h_FE(1)

V_CE= 4V, I_C= 0.3A

DC current gain

h_FE(2)

V_CE=4 V, I_C= 3A

V_CE(sat)

V_BE(on

I_C=6A, I_B=0.6A

V_CE= 4V, I_C=6A

1.5

Collector-emitter saturation voltage

Base-emitter voltage

_CE=10V , I_C=0.5A

f_T

MH_Z

Transition frequency

f =1MHz

中文翻译

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