BD250-S

更新时间： 2024-11-04 13:05:55

品牌	Logo	应用领域
伯恩斯 - BOURNS		晶体晶体管功率双极晶体管开关 PC 局域网
页数	文件大小	规格书
5页	110K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

BD250-S 数据手册

BD250, BD250A, BD250B, BD250C

PNP SILICON POWER TRANSISTORS

●

Designed for Complementary Use with the

BD249 Series

SOT-93 PACKAGE

(TOP VIEW)

●

125 W at 25°C CaseTemperature

25 A Continuous Collector Current

40 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD250

-55

BD250A

BD250B

BD250C

BD250

-70

Collector-emitter voltage (R_BE= 100 Ω)

V_CER

-90

-115

-45

BD250A

BD250B

BD250C

-60

Collector-emitter voltage (I_C= -30 mA)

V_CEO

-80

-100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

-5

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

-25

-40

-5

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

125

°C

½LI_C

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= -0.4 A, R_BE= 100 Ω,

_BE(off)= 0, R_S= 0.1 Ω, V_CC= -20 V.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4 5

中文翻译

下载PDF

BD250-S 替代型号

型号	品牌	替代类型	描述	数据表
BD250A-S	BOURNS	类似代替	Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
BD250B-S	BOURNS	类似代替	Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
TIP36AG	ONSEMI	功能相似	Complementary Silicon High?Power Transistors

与BD250-S相关器件

型号	品牌	获取价格	描述	数据表
BD253A	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
BD254	ETC	获取价格	BD254 - Tranzystor krzemowy du縠j mocy. ma砮j c
BD255	ETC	获取价格	BD255 - Tranzystor krzemowy du縠j mocy. ma砮j c
BD25A20	ETC	获取价格	BRUSHLESS SERVO AMPLIFIERS
BD25A20AC	ETC	获取价格	BRUSHLESS SERVO AMPLIFIERS
BD25A20IX	ETC	获取价格	BRUSHLESS SERVO AMPLIFIERS
BD25A20X	ETC	获取价格	BRUSHLESS SERVO AMPLIFIERS
BD25A-AC	ETC	获取价格	BRUSHLESS SERVO AMPLIFIERS
BD25B	BEREX	获取价格	Quadruple Band 2-Way SMT Power Divider
BD25B_1	BEREX	获取价格	Quadruple Band 2-Way SMT Power Divider