Datasheet > TIP36C

TIP36C

更新时间： 2024-11-04 11:57:35

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描述
Complementary Silicon High Power Ttransistors

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中文翻译

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TIP36C 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

Complementary Silicon High Power Ttransistors

TIP35C / TIP36C

DESCRIPTION

It is intented for use in power

amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS

( Ta = 25 C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Value Unit

Symbol

V_CBO

100

V_CEO

V_EBO

I_C

100

Base Current

I_B

Total Dissipation at

P_tot

T_j

125

150

^oC

Max. Operating Junction Temperature

Storage Temperature

TO-3PN

T_stg

-55~150 ^oC

ELECTRICAL CHARACTERISTICS

( Ta = 25 C)

Parameter

Collector Cut-off Current

Emitter Cut-off Current

Symbol

Test Conditions

Min.

Typ.

Max. Unit

I_CEO

I_EBO

V_CB=60V, I_E=0

V_EB=5V, I_C=0

1.0

V_CEO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

Collector-Emitter Sustaining Voltage

DC Current Gain

I_C=30mA, I_B=0

V_CE=4V, I_C=1.5A

V_CE=4V, I_C=15A

I_C=25A,I_B=5A

V_CE=4V,I_C=15A

V_CE=5V,I_C=1A

100

4.0

2.0

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

f_T

Transition Frequency

MHz

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