TIP36B

更新时间： 2024-02-02 19:11:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关局域网
页数	文件大小	规格书
6页	161K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

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技术参数
数据手册

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TIP36B 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

TIP36B 数据手册

Order this document

by TIP35A/D

SEMICONDUCTOR TECHNICAL DATA

. . . for general–purpose power amplifier and switching applications.

•

25 A Collector Current

Low Leakage Current — I

Excellent DC Gain — h

High Current Gain Bandwidth Product —

f = 1.0 MHz

= 1.0 mA @ 30 and 60 V

CEO

= 40 Typ @ 15 A

h = 3.0 min @ I = 1.0 A,

fe C

MAXIMUM RATINGS

TIP35A TIP35B TIP35C

TIP36A TIP36B TIP36C

*Motorola Preferred Device

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

25 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–100 VOLTS

125 WATTS

CEO

60 V

80 V

5.0

100 V

Collector Current — Continuous

Peak (1)

Base Current — Continuous

Total Power Dissipation

5.0

Adc

@ T = 25 C

125

1.0

Watts

W/ C

Derate above 25 C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to +150

Unclamped Inductive Load

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

CASE 340D–02

TO–218AC

Thermal Resistance, Junction to Case

1.0

θJC

Junction–To–Free–Air Thermal Resistance

35.7

θJA

(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle

10%.

125

100

125

150

175

100

, CASE TEMPERATURE (

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁶r Power Transistor Device Data

12 3 4 5 6

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