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TIP147FTU PDF预览

TIP147FTU

更新时间: 2024-02-05 22:13:09
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网晶体管
页数 文件大小 规格书
4页 59K
描述
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN

TIP147FTU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-3PF
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:8.52
外壳连接:ISOLATED最大集电极电流 (IC):10 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):500JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):60 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

TIP147FTU 数据手册

 浏览型号TIP147FTU的Datasheet PDF文件第2页浏览型号TIP147FTU的Datasheet PDF文件第3页浏览型号TIP147FTU的Datasheet PDF文件第4页 
TIP145F/146F/147F  
Monolithic Construction With Built In Base-  
Emitter Shunt Resistors  
High DC Current Gain : h = 1000 @ V = -4V, I = -5A (Min.)  
Industrial Use  
Complement to TIP140F/141F/142F  
FE CE C  
TO-3PF  
1
1.Base 2.Collector 3.Emitter  
PNP Epitaxial Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Equivalent Circuit  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Emitter Voltage : TIP145F  
- 60  
- 80  
- 100  
V
V
V
CBO  
CEO  
EBO  
: TIP146F  
: TIP147F  
B
Collector-Emitter Voltage : TIP145F  
- 60  
- 80  
- 100  
V
V
V
: TIP146F  
: TIP147F  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current (DC)  
- 5  
- 10  
V
A
R1  
R2  
I
I
I
C
E
R1 8 k  
R2 0.12 kΩ  
- 15  
A
CP  
B
- 0.5  
A
P
Collector Dissipation (T =25°C)  
60  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
CEO  
: TIP145F  
: TIP146F  
: TIP147F  
I
= - 30mA, I = 0  
- 60  
- 80  
- 100  
V
V
V
C
B
I
Collector Cut-off Current  
: TIP145F  
CEO  
V
V
V
= - 30V, I = 0  
- 2  
- 2  
- 2  
mA  
mA  
mA  
CE  
CE  
CE  
B
: TIP146F  
: TIP147F  
= - 40V, I = 0  
B
= - 50V, I = 0  
B
I
Collector Cut-off Current  
: TIP145F  
CBO  
V
V
V
= - 60V, I = 0  
- 1  
- 1  
- 1  
mA  
mA  
mA  
CB  
CB  
CB  
E
: TIP146F  
: TIP147F  
= - 80V, I = 0  
E
= - 100V, I = 0  
E
I
Emitter Cut-off Current  
DC Current Gain  
V
= - 5V, I = 0  
- 2  
mA  
EBO  
BE  
C
h
V
V
= - 4V, I = - 5A  
1000  
500  
FE  
CE  
CE  
C
= - 4V, I = - 10A  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
I
I
= - 5A, I = - 10mA  
- 2  
- 3  
V
V
CE  
C
C
B
= - 10A, I = - 40mA  
B
V
V
(sat)  
(on)  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Delay Time  
I
= - 10A, I = - 40mA  
- 3.5  
- 3  
V
BE  
BE  
C
B
V
V
I
= - 4V, I = - 10A  
V
CE  
C
t
t
t
t
= - 30V, I = - 5A  
0.15  
0.55  
2.5  
µs  
µs  
µs  
µs  
D
CC  
C
= -20mA, I = 20mA  
Rise Time  
B1  
B2  
R
R = 6Ω  
L
Storage Time  
STG  
f
Fall Time  
2.5  
©2002 Fairchild Semiconductor Corporation  
Rev. B, December 2002  

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