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TIP147T PDF预览

TIP147T

更新时间: 2023-06-19 14:31:42
品牌 Logo 应用领域
安森美 - ONSEMI 局域网放大器晶体管达林顿晶体管
页数 文件大小 规格书
6页 221K
描述
PNP外延硅达林顿晶体管

TIP147T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-3PN
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:7.16
Is Samacsys:N最大集电极电流 (IC):10 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):500JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):125 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

TIP147T 数据手册

 浏览型号TIP147T的Datasheet PDF文件第2页浏览型号TIP147T的Datasheet PDF文件第3页浏览型号TIP147T的Datasheet PDF文件第4页浏览型号TIP147T的Datasheet PDF文件第5页浏览型号TIP147T的Datasheet PDF文件第6页 
Order this document  
by TIP140/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low frequency switching applications.  
High DC Current Gain — Min h  
FE  
= 1000 @ I = 5 A, V  
Collector–Emitter Sustaining Voltage — @ 30 mA  
= 4 V  
CE  
C
V
V
V
= 60 Vdc (Min) — TIP140, TIP145  
= 80 Vdc (Min) — TIP141, TIP146  
= 100 Vdc (Min) — TIP142, TIP147  
CEO(sus)  
CEO(sus)  
CEO(sus)  
Monolithic Construction with Built–In Base–Emitter Shunt Resistor  
MAXIMUM RATINGS  
*Motorola Preferred Device  
TIP140  
TIP145  
TIP141  
TIP146  
TIP142  
TIP147  
10 AMPERE  
DARLINGTON  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
60100 VOLTS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
60  
60  
80  
80  
100  
100  
V
CB  
EB  
V
5.0  
125 WATTS  
Collector Current — Continuous  
Peak (1)  
I
C
10  
15  
Base Current — Continuous  
Total Device Dissipation  
@ T = 25 C  
C
I
0.5  
Adc  
B
P
125  
Watts  
D
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
65 to +150  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Case to Ambient  
R
1.0  
θJC  
θJA  
R
35.7  
CASE 340D–02  
(1) 5 ms,  
10% Duty Cycle.  
DARLINGTON SCHEMATICS  
NPN  
PNP  
COLLECTOR  
COLLECTOR  
TIP140  
TIP141  
TIP142  
TIP145  
TIP146  
TIP147  
BASE  
BASE  
8.0 k  
40  
8.0 k  
40  
EMITTER  
EMITTER  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1996

TIP147T 替代型号

型号 品牌 替代类型 描述 数据表
TIP32CG ONSEMI

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TIP41CG ONSEMI

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Complementary Silicon Plastic Power Transistors
TIP127G ONSEMI

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Plastic Medium-Power Complementary Silicon Transistors

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