Datasheet > TIP150

TIP150

更新时间： 2024-11-02 12:23:43

品牌	Logo	应用领域
COMSET		晶体晶体管开关局域网
页数	文件大小	规格书
3页	101K
描述
SILICON DARLINGTON POWER TRANSISTORS

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中文翻译

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技术参数
数据手册

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TIP150 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

TIP150 数据手册

SEMICONDUCTORS

TIP150

SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220

enveloppe.

High voltage, high forward and reverse energy designed for industrial and consumer

applications.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

I_CM

I_B

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Peak Current (1)

Base Current

300

1.5

Power Dissipation at Case

Temperature (2)

Power Dissipation at free Air

Temperature (3)

Junction Temperature

Storage Temperature range

Lead Temperature 3.2 mm from case for 10 seconde

P_T

@ T_mb< 25°

Watts

°C

t_J

t_s

t_L

-65 to +150

260

1. This value applies for t_p<5ms, duty cycle <10%.

2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

R_thJC

R_thJA

From Junction to Case Thermal Resistance

From Junction to Free-Air Thermal Resistance

2.5

°C/W

62.5

15/10/2012

09/11/2012

COMSET SEMICONDUCTORS

1/3

12 3

中文翻译

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