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TIP147G PDF预览

TIP147G

更新时间: 2024-11-18 04:28:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
7页 91K
描述
Darlington Complementary Silicon Power Transistors

TIP147G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-218包装说明:LEAD FREE, CASE 340D-02, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.7
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):500JEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):125 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

TIP147G 数据手册

 浏览型号TIP147G的Datasheet PDF文件第2页浏览型号TIP147G的Datasheet PDF文件第3页浏览型号TIP147G的Datasheet PDF文件第4页浏览型号TIP147G的Datasheet PDF文件第5页浏览型号TIP147G的Datasheet PDF文件第6页浏览型号TIP147G的Datasheet PDF文件第7页 
TIP140, TIP141, TIP142,  
(NPN); TIP145, TIP146,  
TIP147, (PNP)  
TIP141, TIP142, TIP146, and TIP147 are Preferred Devices  
Darlington Complementary  
Silicon Power Transistors  
http://onsemi.com  
Designed for general−purpose amplifier and low frequency  
switching applications.  
10 AMPERE  
DARLINGTON  
Features  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
60−100 VOLTS, 125 WATTS  
High DC Current Gain −  
Min h  
= 1000 @ I  
C
FE  
= 5.0 A, V = 4 V  
CE  
Collector−Emitter Sustaining Voltage − @ 30 mA  
V
= 60 Vdc (Min) − TIP140, TIP145  
= 80 Vdc (Min) − TIP141, TIP146  
= 100 Vdc (Min) − TIP142, TIP147  
CEO(sus)  
Monolithic Construction with Built−In Base−Emitter Shunt Resistor  
Pb−Free Packages are Available*  
SOT−93 (TO−218)  
CASE 340D  
STYLE 1  
MAXIMUM RATINGS  
TIP140 TIP141 TIP142  
TIP145 TIP146 TIP147  
Rating  
Symbol  
Unit  
Collector − Emitter Voltage  
V
60  
60  
80  
80  
100  
100  
Vdc  
CEO  
Collector − Base Voltage  
Emitter − Base Voltage  
Collector Current  
V
Vdc  
Vdc  
Adc  
CB  
EB  
V
5.0  
MARKING DIAGRAM  
I
C
10  
15  
− Continuous  
− Peak (Note 1)  
Base Current − Continuous  
I
0.5  
Adc  
W
B
Total Power Dissipation  
P
125  
D
AYWWG  
TIP14x  
@ T = 25_C  
C
Operating and Storage  
Junction Temperature Range  
T , T  
−65 to +150  
_C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
Thermal Resistance,  
Junction−to−Case  
R
1.0  
°C/W  
q
JC  
JA  
Thermal Resistance,  
Junction−to−Ambient  
R
35.7  
°C/W  
q
TIP14x = Device Code  
x
G
= 0, 1, 2, 5, 6, or 7  
= Pb−Free Package  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
1. 5 ms, v 10% Duty Cycle.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 5  
TIP140/D  
 

TIP147G 替代型号

型号 品牌 替代类型 描述 数据表
BDV64BG ONSEMI

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Complementary Silicon Plastic Power Darlingtons
TIP147 ONSEMI

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DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
TIP147 STMICROELECTRONICS

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