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TIP147T

更新时间: 2024-11-02 04:28:27
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页数 文件大小 规格书
2页 161K
描述
SILICON PLANAR POWER DARLINGTON TRANSISTORS

TIP147T 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Is Samacsys:NBase Number Matches:1

TIP147T 数据手册

 浏览型号TIP147T的Datasheet PDF文件第2页 
Transys  
Electronics  
L
I M I T E D  
SILICON PLANAR POWER DARLINGTON TRANSISTORS  
TIP142T NPN  
TIP147T PNP  
TO-220  
Plastic Package  
For use in Power Linear and Switching Applications  
ABSOLUTE MAXIMUM RATINGS  
DESCRIPTION  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
100  
100  
5.0  
UNIT  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Current  
V
V
V
A
10  
ICM  
Collector Peak Current (Repetitive)  
Base Current  
20  
IB  
Ptot  
0.5  
A
W
Power Dissipation @ Tc=25ºC  
80  
Tj, Tstg  
Operating & Storage Junction  
- 65 to +150  
1.0  
ºC  
Temperature Range  
THERMAL RESISTANCE  
Junction to Case  
Rth (j-c)  
ºC/W  
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL  
ICBO  
TEST CONDITION  
MIN  
TYP MAX  
UNIT  
mA  
mA  
mA  
V
VCB=100V, IE=O  
VCE=50V, IB=0  
VEB=5V, IC=0  
Collector Cut off Current  
Collector Cut off Current  
Emitter Cut off Current  
1.0  
2.0  
2.0  
ICEO  
IEBO  
VCEO  
*
IC=30mA, IB=0  
IC=5A, IB=10mA  
IC=10A, IB=40mA  
IC=10A, VCE=4V  
IC=5A, VCE=4V  
IC=10A, VCE=4V  
Collector Emitter (sus) voltage  
Collector Emitter Saturation Voltage  
100  
V
CE(sat)  
*
2.0  
3.0  
3.0  
V
VBE(on) *  
Base Emitter on Voltage  
DC Current Gain  
V
hFE  
*
1000  
500  
SWITCHING TIME  
Turn on time  
ton  
toff  
0.9  
4.0  
µs  
µs  
Ic=10A, IB1=IB2= - 40mA,  
RL=3Ω  
Turn off time  
*Pulsed : Pulse duration =200µs, Duty Cycle=1.5%  

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