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TIP147 PDF预览

TIP147

更新时间: 2024-11-04 12:23:43
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
3页 74K
描述
NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS

TIP147 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.23Is Samacsys:N
最大集电极电流 (IC):10 A配置:DARLINGTON
最小直流电流增益 (hFE):500最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):125 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

TIP147 数据手册

 浏览型号TIP147的Datasheet PDF文件第2页浏览型号TIP147的Datasheet PDF文件第3页 
TIP145 – TIP146 – TIP147  
NPN SILICON DARLINGTONS,  
SILICON POWER TRANSISTORS  
They are silicon epitaxial-base PNP transistors in monolithic Darlington configuration and are  
mounted in SOT93 plastic packtage.  
They are intended for use in power linear and switching application.  
The complementary are TIP140, TIP141, TIP142.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
Ratings  
Value  
Unit  
V
TIP145  
TIP146  
TIP147  
TIP145  
TIP146  
TIP147  
-60  
-80  
-100  
-60  
-80  
-100  
-5.0  
Collector-Emitter Voltage  
Collector-Base Voltage  
VCBO  
V
Emitter-Base Voltage  
Collector Current  
VEBO  
IC  
V
A
-10  
-15  
IC  
ICM  
Base Current  
-0.5  
IB  
A
Power Dissipation  
Junction Temperature  
Storage Temperature  
@ Tmb = 25° C  
PT  
TJ  
TS  
125  
150  
-65 to +150  
Watts  
°C  
THERMAL CHARACTERISTICS  
Symbol  
RthJ-mb  
Ratings  
Value  
Unit  
Thermal Resistance Junction - Case  
1
°C / W  
30/10/2012  
COMSET SEMICONDUCTORS  
1/3  

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